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PD85035C
RF power transistor - LdmoST family
Preliminary Data
Features

Excellent thermal stability Common source configuration POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V BeO-free ceramic package ESD protection In compliance with the 2002/95/EC european directive
M243 Epoxy sealed
Description
The PD85035C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology. PD85035C's superior linearity performance makes it an ideal solution for car mobile radio. Figure 1. Pin connection
1
3
2 1. Drain 2. Gate 3. Source
Table 1.
Device summary
Order code PD85035C Package M243 Packing Box
November 2007
Rev 1
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www.st.com 10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
PD85035C
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 4 5 6
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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PD85035C
Electrical data
1
1.1
Electrical data
Maximum ratings
Table 2.
Symbol V(BR)DSS VGS ID PDISS TJ TSTG
Absolute maximum ratings (TCASE = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 C) Max. operating junction temperature Storage temperature Value 40 -0.5 to +15 8 108 200 -65 to +150 Unit V V A W C C
1.2
Thermal data
Table 3.
Symbol RthJC
Thermal data
Parameter Junction - case thermal resistance Value 1.2 Unit C/W
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Electrical characteristics
PD85035C
2
Electrical characteristics
TCASE = +25 oC
2.1
Static
Table 4.
Symbol IDSS IGSS VGS(Q) VDS(ON) CISS COSS CRSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V
Static
Test conditions VDS = 25 V VDS = 0 V ID = TBD ID = 3 A VDS = 12.5 V VDS = 12.5 V VDS = 12.5 V f = 1 MHz f = 1 MHz f = 1 MHz TBD 0.64 76 45 1.4 0.7 Min Typ Max 1 1 Unit A A V V pF pF pF
2.2
Dynamic
Table 5.
Symbol P3dB GP hD
Dynamic
Test conditions VDD = 13.6 V, IDQ = 350 mA f = 945 MHz Min 35 15 60 20:1 17.5 77 Typ Max Unit W dB % VSWR
VDD = 13.6 V, IDQ = 350 mA, POUT = 15W, f = 945 MHz VDD = 13.6 V, IDQ = 350 mA, POUT = P3dB, f = 945 MHz
Load VDD = 17 V, IDQ = 350 mA, POUT = 50W, f = 945 MHz mismatch All phase angles
2.3
ESD protection characteristics
Table 6. ESD protection characteristics
Test conditions Human body model Machine model Class 2 M3
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PD85035C
Impedance
3
Impedance
Figure 2. Current conventions
Table 7.
Impedance data
Freq. (MHz) 945 MHz ZIN () 1.08 +j 2.05 ZDL() 2.14 + j 2.17
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Typical performance
PD85035C
4
Figure 3.
160
Typical performance
Capacitances vs drain voltage
p g
Crss
140 120 100 80 60 40 20 0 0 10 20
Figure 4.
Coss
ID vs VGS
Ciss
Capacitances (pF)
Freq = 1 MHz
Vdd (V)
30
40
50
Figure 5.
Threshold voltage
g
Figure 6.
DC output characteristic
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PD85035C Figure 7.
24 22 20 Gain (dB) 18 16 14 12 10 0 5 10 15 20 25 30 35 40 45 50 Pout (W)
Typical performance Gain vs output power and bias current
150mA 250mA 350mA 500mA
Figure 8.
50 45 40 35
Pout and efficiency vs input power
y
Pout
p
Nd
p
100 90 80 70
Pout (W)
25 20 15
50 40 30
Freq = 945 MHz Vdd = 13.6V
10 5 0 0.0 0.5 1.0 1.5
Freq = 945 MHz Vdd = 13.6V Idq = 350mA
2.0 2.5
20 10 0 3.0
Pin (W)
Figure 9.
60
Pout and drain current vs supply voltage
pp y
6 5 4
Figure 10. Pout and drain current vs gate voltage
50 45 40 35
50 40
Pout
Id
Freq = 945 MHz Pin = 0.4W Vdd = 13.6V Idq = 350mA
5
4
Pout (W)
Pout (W)
Id (A)
30 25 20 15
3
30 20
3 2
2
10 0 7 10 13
Freq = 945 MHz Pin = 1.2W Idq = 350mA
16 19
1 0
10 5 0 0 1 2 3 4
1
Pout
5
Id
6
0
Vdd (V)
Vgs (V)
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Id (A)
Nd (%)
30
60
Package mechanical data
PD85035C
5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com Table 8.
Dim. Min A B C D E F G H I J 20.07 8.89 0.10 3.18 1.83 1.27 5.21 5.46 5.59 14.27 20.57 9.40 0.15 4.45 2.24 1.78 0.790 0.350 0.004 0.125 0.072 0.050
M243 (.230 x .360 2L N/HERM W/FLG) mechanical data
mm Typ Max 5.72 6.48 6.10 Min 0.205 0.215 0.220 0.562 0.810 0.370 0.006 0.175 0.088 0.070 Inch Typ Max 0.225 0.255 0.240
Figure 11. Package dimensions
Controlling dimension: Inches
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1022142E
PD85035C
Revision history
6
Revision history
Table 9.
Date 16-Nov-2007
Document revision history
Revision 1 Initial release. Changes
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PD85035C
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